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What is Silicon Substrate

Adopted as LED substrate, silicon is the characterized as excellent electrical and thermal conductivity, good workability and quality and large size for lighting. While the greatest advantage is the substantial cost reduction. Silicon substrate is much lower at cost than sapphire substrate and SiC substrate. Furthermore, larger size of silicon can improve MOCVD utilization rate and LED chip light emitting ratio.

Laterial-contact and vertical-contact are the two contact ways for Silicon-substrated LED chip; by which the internal current can flow transversely and vertically. Vertical current flow can augment light emitting area and enhance light emitting efficiency. In addition, excellent thermal conductivity of silicon substrate extends the lifespan.

It is more difficult for GaN growth on silicon substrate than sapphire substrate and SiC substrate with the larger lattice mismatch and thermal mismatch between silicon substrate and GaN. What is worse, Coefficient of thermal expansion will lead to cracking of GaN film, and eventually reduce external quantum efficiency(EQE).

How to make well-performed GaN LED on silicon substrate, one of the key problems is how to grow the high quality non-cracking GaN epitaxy. The primary techniques nowadays are MOCVD and MBE; whatsoever of which buffer-layer technique is the very essence. AlN technology is commonly applied in GaN epitaxy growth today.

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